화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Plasma implanted ultra shallow junction boron depth profiles: Effect of plasma chemistry and sheath conditions
Walther S, Godet L, Buyuklimanli T, Weeman J
Journal of Vacuum Science & Technology B, 24(1), 489, 2006
2 Evaluation of charging damage test structures for ion implantation processes
Goeckner MJ, Felch SB, Weeman J, Mehta S, Reedholm JS
Journal of Vacuum Science & Technology A, 17(4), 1501, 1999