검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Doping induced lattice misfit in 4H-SiC homoepitaxy Kallinger B, Berwian P, Friedrich J, Muller G, Weber AD, Volz E, Trachta G, Spiecker E, Thomas B Journal of Crystal Growth, 349(1), 43, 2012 |
| 2 |
Threading dislocations in n- and p-type 4H-SiC material analyzed by etching and synchrotron X-ray topography Kallinger B, Polster S, Berwian P, Friedrich J, Muller G, Danilewsky AN, Wehrhahn A, Weber AD Journal of Crystal Growth, 314(1), 21, 2011 |
| 3 |
Defect reduction in sublimation grown silicon carbide crystals by adjustment of thermal boundary conditions Schmitt E, Rasp M, Weber AD, Kolbl M, Eckstein R, Kadinski L, Selder M Materials Science Forum, 353-356, 15, 2001 |