| 1 |
Thermal solid-phase crystallization of amorphous CuCrO2:N thin films deposited by reactive radio-frequency magnetron sputtering
Chiba H, Hosaka N, Kawashima T, Washio K
Thin Solid Films, 652, 16, 2018 |
| 2 |
Effects of Ge growth rate and temperature on C-mediated Ge dot formation on Si (100) substrate
Satoh Y, Itoh Y, Kawashima T, Washio K
Thin Solid Films, 621, 42, 2017 |
| 3 |
Ge dots formation using Si(100)-c( 4 x 4) surface reconstruction
Satoh Y, Itoh Y, Kawashima T, Washio K
Journal of Crystal Growth, 438, 1, 2016 |
| 4 |
Optimization of Si-C reaction temperature and Ge thickness in C-mediated Ge dot formation
Satoh Y, Itoh Y, Kawashima T, Washio K
Thin Solid Films, 602, 29, 2016 |
| 5 |
Formation of Ge dot or film in Ge/Si heterostructure by using sub-monolayer carbon deposition on top and in-situ post annealing
Itoh Y, Hatakeyama S, Kawashima T, Washio K
Thin Solid Films, 602, 32, 2016 |
| 6 |
Comparison study of V-doped ZnO thin films on polycarbonate and quartz substrates deposited by RF magnetron sputtering
Suzuki T, Chiba H, Kawashima T, Washio K
Thin Solid Films, 605, 53, 2016 |
| 7 |
Effect of vanadium doping on amorphization of ZnO thin films on c-plane sapphire substrate
Watanabe A, Chiba H, Kawashima T, Washio K
Thin Solid Films, 605, 73, 2016 |
| 8 |
Formation of Ge dots on Si(100) using reaction of Ge with sub-monolayer carbon on top
Itoh Y, Hatakeyama S, Kawashima T, Washio K
Journal of Crystal Growth, 426, 61, 2015 |
| 9 |
Structural transition in Ge growth on Si mediated by sub-monolayer carbon
Itoh Y, Hatakeyama S, Washio K
Thin Solid Films, 557, 61, 2014 |
| 10 |
Conductive and transparent V-doped ZnO thin films grown by radio frequency magnetron sputtering
Okuda S, Matsuo T, Chiba H, Mori T, Washio K
Thin Solid Films, 557, 197, 2014 |
