검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Study of surface-trap-induced gate depletion region of field-modulating plate GaAs-FETs Wakejima A, Ota K, Matsunaga K Solid-State Electronics, 50(3), 372, 2006 |
| 2 |
Extremely High Uniformity of Interfaces in GaAs/AlGaAs Quantum-Wells Grown on (411)A GaAs Substrates by Molecular-Beam Epitaxy Hiyamizu S, Shimomura S, Wakejima A, Kaneko S, Adachi A, Okamoto Y, Sano N, Murase K Journal of Vacuum Science & Technology B, 12(2), 1043, 1994 |
| 3 |
Lateral Variation of Indium Content in InGaAs Grown on GaAs Channeled Substrates by Molecular-Beam Epitaxy Wakejima A, Inoue A, Kitada T, Tomita N, Shimomura S, Hiyamizu S, Fujii M, Yamamoto T, Kobayashi K, Sano N Journal of Vacuum Science & Technology B, 12(2), 1102, 1994 |