검색결과 : 21건
| No. | Article |
|---|---|
| 1 |
Pulse input Class-C power amplifier response of SiC MESFET using physical transistor structure in TCAD Azam S, Svensson C, Wahab Q Solid-State Electronics, 52(5), 740, 2008 |
| 2 |
Influence of interface state charges on RF performance of LDMOS transistor Kashif A, Johansson T, Svensson C, Azam S, Arnborg T, Wahab Q Solid-State Electronics, 52(7), 1099, 2008 |
| 3 |
SiC and ill-nitride growth in a hot-wall CVD reactor Janzen E, Bergman JP, Danielsson O, Forsberg U, Hallin C, Ul Hassan J, Henry A, Ivanov IG, Kakanakova-Georgieva A, Persson P, ul Wahab Q Materials Science Forum, 483, 61, 2005 |
| 4 |
Evaluation of MOS structures processed on 4H-SiC layers grown by PVT epitaxy Ciechonski RR, Syvajarvi M, Wahab Q, Yakimova R Solid-State Electronics, 49(12), 1917, 2005 |
| 5 |
Characterization of mass-transport grown GaN by hydride vapour-phase epitaxy Paskova T, Paskov PP, Goldys EM, Valcheva E, Darakchieva V, Sodervall U, Godlewski M, Zielinski M, Hautakangas S, Saarinen K, Carlstrom CF, Wahab Q, Monemar B Journal of Crystal Growth, 273(1-2), 118, 2004 |
| 6 |
Homoepitaxial on-axis growth of 4H-and 6H-SIC by CVD Hallin C, Wahab Q, Ivanov I, Bergman P, Janzen E Materials Science Forum, 457-460, 193, 2004 |
| 7 |
Growth of device quality 4H-SiC by high velocity epitaxy Yakimova R, Syvajarvi M, Ciechonski RR, Wahab Q Materials Science Forum, 457-460, 201, 2004 |
| 8 |
DC and RF performance of insulating gate 4H-SiC depletion mode Field Effect Transistors Jonsson R, Wahab Q, Rudner S Materials Science Forum, 457-460, 1225, 2004 |
| 9 |
Computational load pull simulations of SiC microwave power transistors Jonsson R, Wahab Q, Rudner S, Svensson C Solid-State Electronics, 47(11), 1921, 2003 |
| 10 |
4H-and 6H-SiC MOSFETs fabricated on sloped sidewalls formed by molten KOH etching Wahab Q, Kosugi H, Yano H, Hallin C, Kimoto T, Matsunami H Materials Science Forum, 389-3, 1215, 2002 |