검색결과 : 56건
| No. | Article |
|---|---|
| 1 |
De-bondable SiC-SiC wafer bonding via an intermediate Ni nano-film Mu FW, Uomoto M, Shimatsu T, Wang YH, Iguchi K, Nakazawa H, Takahashi Y, Higurashi E, Suga T Applied Surface Science, 465, 591, 2019 |
| 2 |
Interface characteristics comparison of sapphire direct and indirect wafer bonded structures by transmission electron microscopy Li WW, Liang T, Liu WY, Lei C, Hong YP, Li YW, Li ZQ, Xiong JJ Applied Surface Science, 494, 566, 2019 |
| 3 |
Temperature-dependent interface characteristic of silicon wafer bonding based on an amorphous germanium layer deposited by DC-magnetron sputtering Ke SY, Lin SM, Ye YJ, Mao DF, Huang W, Xu JF, Li C, Chen SY Applied Surface Science, 434, 433, 2018 |
| 4 |
GaN-Si direct wafer bonding at room temperature for thin GaN device transfer after epitaxial lift off Mu FW, Morino Y, Jerchel K, Fujino M, Suga T Applied Surface Science, 416, 1007, 2017 |
| 5 |
Back-gated InGaAs-on-insulator lateral N+NN+ MOSFET: Fabrication and typical conduction mechanisms Park HJ, Pirro L, Czornomaz L, Ionica I, Bawedin M, Djara V, Deshpande V, Cristoloveanu S Solid-State Electronics, 128, 80, 2017 |
| 6 |
Investigation of room-temperature wafer bonded GaInP/GaAs/InGaAsP triple-junction solar cells Yang WX, Dai P, Ji L, Tan M, Wu YY, Uchida S, Lu SL, Yang H Applied Surface Science, 389, 673, 2016 |
| 7 |
Transparent and electrically conductive GaSb/Si direct wafer bonding at low temperatures by argon-beam surface activation Predan F, Reinwand D, Klinger V, Dimroth F Applied Surface Science, 353, 1203, 2015 |
| 8 |
GaAs solar cell on Si substrate with good ohmic GaAs/Si interface by direct wafer bonding Kim S, Geum DM, Park MS, Kim CZ, Choi WJ Solar Energy Materials and Solar Cells, 141, 372, 2015 |
| 9 |
Plasma-silicone interaction during a-Si:H deposition on solar cell wafers bonded to glass Granata SN, Boulord C, Govaerts J, Bearda T, Beaucame G, Soogund D, Perez RV, Dross F, Abdulraheem Y, Poortmans J, Mertens R Solar Energy Materials and Solar Cells, 124, 48, 2014 |
| 10 |
Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire Gautier S, Moudakir T, Patriarche G, Rogers DJ, Sandana VE, Teherani FH, Bove P, El Gmili Y, Pantzas K, Sundaram S, Troadec D, Voss PL, Razeghi M, Ougazzaden A Journal of Crystal Growth, 370, 63, 2013 |