검색결과 : 5건
No. | Article |
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1 |
Analysis of dielectric function and dynamic structure-factor of a multi-component plasma in a wurtzite GaN Kim HJ, Yi KS Current Applied Physics, 15, S16, 2015 |
2 |
Synthesis and structure of nanocrystal-assembled bulk GaN Chen XL, Cao YG, Lan YC, Xu XP, Li JQ, Lu KQ, Jiang PZ, Bai ZG, Yu YD, Liang JK Journal of Crystal Growth, 209(1), 208, 2000 |
3 |
AlN and GaN epitaxial heterojunctions on 6H-SiC(0001): Valence band offsets and polarization fields Rizzi A, Lantier R, Monti F, Luth H, Della Sala F, Di Carlo A, Lugli P Journal of Vacuum Science & Technology B, 17(4), 1674, 1999 |
4 |
Exciton localization in InGaN quantum well devices Chichibu S, Sota T, Wada K, Nakamura S Journal of Vacuum Science & Technology B, 16(4), 2204, 1998 |
5 |
Soft x-ray emission studies of the bulk electronic structure of AlN, GaN, and Al0.5Ga0.5N Smith KE, Duda LC, Stagarescu CB, Downes J, Korakakis D, Singh R, Moustakas TD, Guo JH, Nordgren J Journal of Vacuum Science & Technology B, 16(4), 2250, 1998 |