화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Analysis of dielectric function and dynamic structure-factor of a multi-component plasma in a wurtzite GaN
Kim HJ, Yi KS
Current Applied Physics, 15, S16, 2015
2 Synthesis and structure of nanocrystal-assembled bulk GaN
Chen XL, Cao YG, Lan YC, Xu XP, Li JQ, Lu KQ, Jiang PZ, Bai ZG, Yu YD, Liang JK
Journal of Crystal Growth, 209(1), 208, 2000
3 AlN and GaN epitaxial heterojunctions on 6H-SiC(0001): Valence band offsets and polarization fields
Rizzi A, Lantier R, Monti F, Luth H, Della Sala F, Di Carlo A, Lugli P
Journal of Vacuum Science & Technology B, 17(4), 1674, 1999
4 Exciton localization in InGaN quantum well devices
Chichibu S, Sota T, Wada K, Nakamura S
Journal of Vacuum Science & Technology B, 16(4), 2204, 1998
5 Soft x-ray emission studies of the bulk electronic structure of AlN, GaN, and Al0.5Ga0.5N
Smith KE, Duda LC, Stagarescu CB, Downes J, Korakakis D, Singh R, Moustakas TD, Guo JH, Nordgren J
Journal of Vacuum Science & Technology B, 16(4), 2250, 1998