| 1 |
Microstructural properties of plasma-enhanced chemical vapor deposited WNx films using WF6-H-2-N-2 precursor system
Kim SD
Current Applied Physics, 7(4), 426, 2007 |
| 2 |
Tungsten nitride thin films deposited by MOCVD: sources of carbon and effects on film structure and stoichiometry
Bchir OJ, Green KM, Hlad MS, Anderson TJ, Brooks BC, McElwee-White L
Journal of Crystal Growth, 261(2-3), 280, 2004 |
| 3 |
Tungsten nitride films grown via pulsed laser deposition studied in situ by electron spectroscopies
Soto G, de la Cruz W, Castillon FF, Diaz JA, Machorro R, Farias MH
Applied Surface Science, 214(1-4), 58, 2003 |
| 4 |
Characterization of WF6/N-2/H-2 plasma enhanced chemical vapor deposited WxN films as barriers for Cu metallization
Li H, Jin S, Bender H, Lanckmans F, Heyvaert I, Maex K, Froyen L
Journal of Vacuum Science & Technology B, 18(1), 242, 2000 |
| 5 |
Thermal stability of selective chemical vapor deposited tungsten contact and effects of in situ N-2 plasma treatment
Wang MT, Wang PC, Chuang MC, Chen LJ, Chen MC
Journal of Vacuum Science & Technology B, 16(4), 2026, 1998 |
