검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Advanced chemical model for analysis of Cz and DS Si-crystal growth Vorob'ev AN, Sid'ko AP, Kalaev VV Journal of Crystal Growth, 386, 226, 2014 |
| 2 |
Modeling analysis of SiCCVD in a planetary reactor Vorob'ev AN, Semennikov AK, Zhmakin AI, Makarov YN, Dauelsberg M, Wischmeyer F, Heuken M, Jurgensen H Materials Science Forum, 353-356, 103, 2001 |
| 3 |
Influence of silicon gas-to-particle conversion on SiCCVD in a cold-wall rotating-disc reactor Vorob'ev AN, Bogdanov MV, Komissarov AE, Karpov SY, Bord OV, Lovtsus AA, Makarov YN Materials Science Forum, 353-356, 107, 2001 |
| 4 |
Growth of silicon carbide by sublimation sandwich method in the atmosphere of inert gas Segal AS, Vorob'ev AN, Karpov SY, Mokhov EN, Ramm MG, Ramm MS, Roenkov AD, Vodakov YA, Makarov YN Journal of Crystal Growth, 208(1-4), 431, 2000 |
| 5 |
Effect of gas-phase nucleation on chemical vapor deposition of silicon carbide Vorob'ev AN, Karpov SY, Zhmakin AI, Lovtsus AA, Makarov YN, Krishnan A Journal of Crystal Growth, 211(1-4), 343, 2000 |