화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Chemical/Structural Nanocharacterization and Electrical Properties of ALD-Grown La2O3/Si Interfaces for Advanced Gate Stacks
Schamm S, Coulon PE, Miao S, Volkos SN, Lu LH, Lamagna L, Wiemer C, Tsoutsou D, Scarel G, Fanciulli M
Journal of the Electrochemical Society, 156(1), H1, 2009
2 Chemical and structural properties of atomic layer deposited La2O3 films capped with a thin Al2O3 layer
Li XL, Tsoutsou D, Scarel G, Wiemer C, Capelli SC, Volkos SN, Lamagna L, Fanciulli M
Journal of Vacuum Science & Technology A, 27(2), L1, 2009
3 Reliability degradation of thin HfO(2)/SiO(2) gate stacks by remote RF hydrogen and deuterium plasma treatment
Efthymiou E, Bernardini S, Zhang JF, Volkos SN, Hamilton B, Peaker AR
Thin Solid Films, 517(1), 207, 2008