| 1 |
TCAD simulation of tunneling leakage current in CaF2/Si(111) MIS structures
Illarionov YY, Vexler MI, Karner M, Tyaginov SE, Cervenka J, Grasser T
Current Applied Physics, 15(2), 78, 2015 |
| 2 |
A wire-form emitter metal-insulator-semiconductor tunnel junction
Vexler MI
Current Applied Physics, 14(3), 306, 2014 |
| 3 |
Light emission from the Au/CaF2/p-Si(111) capacitors: Evidence for an elastic electron tunneling through a thin (1-2 nm) fluoride layer
Illarionov YY, Vexler MI, Fedorov VV, Suturin SM, Sokolov NS
Thin Solid Films, 545, 580, 2013 |
| 4 |
Au/CaF2/nSi(111) tunnel emitter phototransistor
Vexler MI, Illarionov YY, Suturin SM, Fedorov VV, Sokolov NS
Solid-State Electronics, 63(1), 19, 2011 |
| 5 |
Simulation of hole and electron tunnel currents in MIS devices adopting the symmetric Franz-type dispersion relation for the charged carriers in thin insulators
Vexler MI, Kuligk A, Meinerzhagen B
Solid-State Electronics, 53(3), 364, 2009 |
| 6 |
Degradation effects in the one-band-tunneling Au/CaF2/n-Si(111) MIS structures
Vexler MI, Suturin SM, Tyaginov SE, Banshchikov AG, Sokolov NS
Thin Solid Films, 516(23), 8740, 2008 |
| 7 |
Statistical analysis of tunnel currents in scaled MOS structures with a non-uniform oxide thickness distribution
Tyaginov SE, Vexler MI, Shulekin AF, Grekhov IV
Solid-State Electronics, 49(7), 1192, 2005 |
| 8 |
Impact of oxide damage on the light emission properties of MOS tunnel structures
Asli N, Shulekin AF, Yoder PD, Vexler MI, Grekhov IV, Seegebrecht P
Solid-State Electronics, 48(5), 731, 2004 |
| 9 |
Impact of the band-band tunneling in silicon on electrical characteristics of Al/SiO2/P+-Si structures with the sub-3 nm oxide under positive bias
El Hdiy A, Khlil R, Ziane D, Grekhov IV, Shulekin AF, Vexler MI
Solid-State Electronics, 47(4), 617, 2003 |
| 10 |
A simple quantum model for the MOS structure in accumulation mode
Vexler MI
Solid-State Electronics, 47(8), 1283, 2003 |
