화학공학소재연구정보센터
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No. Article
1 Optimization of a buffer layer for cubic silicon carbide growth on silicon substrates
Bosi M, Attolini G, Negri M, Frigeri C, Buffagni E, Ferrari C, Rimoldi T, Cristofolini L, Aversa L, Tatti R, Verucchi R
Journal of Crystal Growth, 383, 84, 2013
2 Epitaxy of Nanocrystalline Silicon Carbide on Si(111) at Room Temperature
Verucchi R, Aversa L, Nardi MV, Taioli S, Beccara SA, Alfe D, Nasi L, Rossi F, Salviati G, Iannotta S
Journal of the American Chemical Society, 134(42), 17400, 2012
3 SiC synthesis by fullerene free jets on Si(111) at low temperatures
Aversa L, Verucchi R, Pedio M, Iannotta S
Materials Science Forum, 433-4, 237, 2002
4 Interface magnetometry in a (Fe-6A/Ni-24A)(10) multilayer
Capelli R, D'Addato S, Gazzadi GC, Pasquali L, Verucchi R, Nannarone S, Dudzik E, Mirone A, Sacchi M
Applied Surface Science, 175, 281, 2001
5 SiC(100) ordered film growth by C-60 decomposition on Si(100) surfaces
Moras P, Mahne N, Ferrari L, Pesci A, Capozi M, Aversa L, Jha SN, Verucchi R, Iannotta S, Pedio M
Applied Surface Science, 184(1-4), 50, 2001
6 Synthesis of SiC on Si(111) at moderate temperatures by supersonic C-60 beams
Aversa L, Verucchi R, Ciullo G, Ferrari L, Moras P, Pedio M, Pesci A, Iannotta S
Applied Surface Science, 184(1-4), 350, 2001
7 Substrate Amorphization Induced by the Sputter-Deposition Process - Geometrical Aspects
Valeri S, Altieri S, Didomenico T, Verucchi R
Journal of Vacuum Science & Technology A, 13(2), 394, 1995