| 1 |
Growth and polarized Raman spectroscopy investigations of single crystal CdSiP2: Experimental measurements and ab initio calculations
Zhang GD, Wei L, Zhang LZ, Wang XP, Liu B, Zhao X, Tao XT
Journal of Crystal Growth, 473, 28, 2017 |
| 2 |
In-situ temperature field measurements and direct observation of crystal/melt at vertical Bridgman growth of lead chloride under stationary and dynamic arrangement
Kral R, Nitsch K
Journal of Crystal Growth, 427, 7, 2015 |
| 3 |
Bridgman growth and defect characterization of large diameter mercury indium telluride crystals for near infrared detectors
Wang LH, Jie WQ
Journal of Crystal Growth, 362, 327, 2013 |
| 4 |
Growth of CdSiP2 single crystals by self-seeding vertical Bridgman method
Zhang GD, Tao XT, Ruan HP, Wang SP, Shi Q
Journal of Crystal Growth, 340(1), 197, 2012 |
| 5 |
Growth improvement and quality evaluation of ZnGeP2 single crystals using vertical Bridgman method
Zhang GD, Tao XT, Wang SP, Shi Q, Ruan HP, Chen LL
Journal of Crystal Growth, 352(1), 67, 2012 |
| 6 |
Vertical Bridgman growth and characterization of large ZnGeP2 single crystals
Xia SX, Wang M, Yang CH, Lei ZT, Zhu GL, Yao BQ
Journal of Crystal Growth, 314(1), 306, 2011 |
| 7 |
Thermoelectric properties of Ge1-xSnxTe crystals grown by vertical Bridgman method
Wu CC, Ferng NJ, Gau HJ
Journal of Crystal Growth, 304(1), 127, 2007 |
| 8 |
Single-crystal growth of mercury indium telluride (MIT) by vertical Bridgman method (VB)
Wang LH, Jie WQ
Journal of Crystal Growth, 290(1), 203, 2006 |
| 9 |
The characteristic of the La3Ga5SiO14 single crystal grown by vertical Bridgman method in Ar atmosphere
Bamba N, Kato K, Taishi T, Hayashi T, Hoshikawa K, Fukami T
Materials Science Forum, 510-511, 842, 2006 |
| 10 |
Characterization of Ge(Se-1-S-x(x))(2) series layered crystals grown by vertical Bridgman method
Wu CC, Ho CH, Wu JY, Lin SL, Huang YS
Journal of Crystal Growth, 281(2-4), 377, 2005 |
