검색결과 : 6건
No. | Article |
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1 |
Growth and characterization of InAlP/InGaAs double barrier RTDs Neumann S, Velling P, Prost W, Tegude FJ Journal of Crystal Growth, 272(1-4), 555, 2004 |
2 |
X-ray characterization of stacked InP/(InGa)As : C HBT and InP/(InGa)As HEMT layer sequences grown by LP-MOVPE using non-gaseous sources Velling P, Keiper D, Brennemann A, Agethen M, Janssen G, Bertenburg RM Journal of Crystal Growth, 248, 139, 2003 |
3 |
MOVPE growth of InAlAs using TBAs and DitBuSi for HEMT applications Keiper D, Velling P, Brennemann A, Agethen M, van den Berg C, Bertenburg RM, Schineller B, Heuken M Journal of Crystal Growth, 248, 153, 2003 |
4 |
Growth of III/V resonant tunnelling diode on Si substrate with LP-MOVPE Neumann S, Bakin A, Velling P, Prost W, Wehmann HH, Schlachetzki A, Tegude FJ Journal of Crystal Growth, 248, 380, 2003 |
5 |
InAlAs/InGaAs/InP heterostructures for RTD and HBT device applications grown by LP-MOVPE using non-gaseous sources Velling P, Agethen M, Prost W, Tegude FJ Journal of Crystal Growth, 221, 722, 2000 |
6 |
HR XRD for the analysis of ultrathin centrosymmetric strained DB-RTD heterostructures Haase M, Prost W, Velling P, Liu Q, Tegude FJ Thin Solid Films, 319(1-2), 25, 1998 |