화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 Growth and characterization of InAlP/InGaAs double barrier RTDs
Neumann S, Velling P, Prost W, Tegude FJ
Journal of Crystal Growth, 272(1-4), 555, 2004
2 X-ray characterization of stacked InP/(InGa)As : C HBT and InP/(InGa)As HEMT layer sequences grown by LP-MOVPE using non-gaseous sources
Velling P, Keiper D, Brennemann A, Agethen M, Janssen G, Bertenburg RM
Journal of Crystal Growth, 248, 139, 2003
3 MOVPE growth of InAlAs using TBAs and DitBuSi for HEMT applications
Keiper D, Velling P, Brennemann A, Agethen M, van den Berg C, Bertenburg RM, Schineller B, Heuken M
Journal of Crystal Growth, 248, 153, 2003
4 Growth of III/V resonant tunnelling diode on Si substrate with LP-MOVPE
Neumann S, Bakin A, Velling P, Prost W, Wehmann HH, Schlachetzki A, Tegude FJ
Journal of Crystal Growth, 248, 380, 2003
5 InAlAs/InGaAs/InP heterostructures for RTD and HBT device applications grown by LP-MOVPE using non-gaseous sources
Velling P, Agethen M, Prost W, Tegude FJ
Journal of Crystal Growth, 221, 722, 2000
6 HR XRD for the analysis of ultrathin centrosymmetric strained DB-RTD heterostructures
Haase M, Prost W, Velling P, Liu Q, Tegude FJ
Thin Solid Films, 319(1-2), 25, 1998