검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Influence of interface roughness on quantum transport in nanoscale FinFET Khan H, Mamaluy D, Vasileska D Journal of Vacuum Science & Technology B, 25(4), 1437, 2007 |
| 2 |
Impact of electronic density of states on electroluminescence refrigeration Yu SQ, Wang JB, Ding D, Johnson SR, Vasileska D, Zhang YH Solid-State Electronics, 51(10), 1387, 2007 |
| 3 |
Self-consistent full band two-dimensional Monte Carlo two-dimensional Poisson device solver for modeling SiGe p-channel devices Krishnan S, Fischetti M, Vasileska D Journal of Vacuum Science & Technology B, 24(4), 1997, 2006 |
| 4 |
Effect of interface roughness on silicon-on-insulator-metal-semiconductor field-effect transistor mobility and the device low-power high-frequency operation Khan T, Vasileska D, Thornton TJ Journal of Vacuum Science & Technology B, 23(4), 1782, 2005 |
| 5 |
Treatment of interface roughness in SOI-MESFETs Khan T, Vasileska D, Thornton TJ Journal of Vacuum Science & Technology B, 22(4), 2110, 2004 |
| 6 |
Green's function approach for transport calculation in a In0.53Ga0.47As/In0.52Al0.48As modulation-doped heterostructure Vasileska D, Prasad C, Wieder HH, Ferry DK Journal of Vacuum Science & Technology B, 21(4), 1903, 2003 |
| 7 |
Electron heating measurements in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterostructure system Prasad C, Ferry DK, Vasileska D, Wieder HH Journal of Vacuum Science & Technology B, 21(4), 1936, 2003 |
| 8 |
Remote plasma enhanced chemical vapor deposition SiO2 in silicon based nanostructures Rack MJ, Hilt LL, Vasileska D, Ferry DK Journal of Vacuum Science & Technology B, 17(4), 1840, 1999 |
| 9 |
Surface roughness of SiO2 from a remote microwave plasma enhanced chemical vapor deposition process Rack MJ, Vasileska D, Ferry DK, Sidorov M Journal of Vacuum Science & Technology B, 16(4), 2165, 1998 |
| 10 |
Quantum Transport - Silicon Inversion-Layers and InAlAs-InGaAs Heterostructures Vasileska D, Eldridge T, Ferry DK Journal of Vacuum Science & Technology B, 14(4), 2780, 1996 |