화학공학소재연구정보센터
검색결과 : 9건
No. Article
1 Photoreflectance characterization of ultrashallow junction activation in millisecond annealing
Chism W, Current M, Vartanian V
Journal of Vacuum Science & Technology B, 28(1), C1C15, 2010
2 The use of unsaturated fluorocarbons for dielectric etch applications
Chatterjee R, Karecki S, Reif R, Vartanian V, Sparks T
Journal of the Electrochemical Society, 149(4), G276, 2002
3 Evaluation of oxalyl fluoride for a dielectric etch application in an inductively coupled plasma etch tool
Karecki S, Chatterjee R, Pruette L, Reif R, Sparks T, Beu L, Vartanian V, Novoselov M
Journal of the Electrochemical Society, 148(3), G141, 2001
4 The evaluation of hexafluorobenzene as an environmentally benign dielectric etch chemistry
Chatterjee R, Karecki S, Reif R, Sparks T, Vartanian V, Goolsby B
Journal of the Electrochemical Society, 148(12), G721, 2001
5 Characterization of iodoheptafluoropropane as a dielectric etchant. I. Process performance evaluation
Karecki S, Chatterjee R, Pruette L, Reif R, Vartanian V, Sparks T, Beu L, Novoselov K
Journal of Vacuum Science & Technology B, 19(4), 1269, 2001
6 Characterization of iodoheptafluoropropane as a dielectric etchant. II. Wafer surface analysis
Karecki S, Chatterjee R, Pruette L, Reif R, Vartanian V, Sparks T, Lee JJ, Beu L, Miller C
Journal of Vacuum Science & Technology B, 19(4), 1293, 2001
7 Characterization of iodoheptafluoropropane as a dielectric etchant. III. Effluent analysis
Karecki S, Chatterjee R, Pruette L, Reif R, Vartanian V, Sparks T, Beu L
Journal of Vacuum Science & Technology B, 19(4), 1306, 2001
8 High density plasma oxide etching using nitrogen trifluoride and acetylene
Pruette L, Karecki S, Chatterjee R, Reif R, Sparks T, Vartanian V
Journal of Vacuum Science & Technology A, 18(6), 2749, 2000
9 Use of 2H-heptafluoropropane, 1-iodoheptafluoropropane, and 2-iodoheptafluoropropane for a high aspect ratio via etch in a high density plasma etch tool
Karecki S, Pruette L, Reif R, Beu L, Sparks T, Vartanian V
Journal of Vacuum Science & Technology A, 16(4), 2722, 1998