검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Development and fabrication of extended short wavelength infrared HgCdTe sensors grown on CdTe/Si substrates by molecular beam epitaxy Simingalam S, VanMil BL, Chen YP, DeCuir EA, Meissner GP, Wijewarnasuriya P, Dhar NK, Rao MV Solid-State Electronics, 101, 90, 2014 |
| 2 |
Etch rates near hot-wall CVD growth temperature for Si-face 4H-SiC using H-2 and C3H8 VanMil BL, Lew KK, Myers-Ward RL, Holm RT, Gaskill DK, Eddy CR, Wang L, Zhao P Journal of Crystal Growth, 311(2), 238, 2009 |
| 3 |
Basal plane dislocation reduction for 8 degrees off-cut, 4H-SiC using in situ variable temperature growth interruptions VanMil BL, Stahlbush RE, Myers-Ward RL, Lew KK, Eddy CR, Gaskill DK Journal of Vacuum Science & Technology B, 26(4), 1504, 2008 |
| 4 |
Effect of growth conditions, surface orientation, and alloy composition on Cl incorporation and activation in ZnSe and Zn1-xMgxSe grown by molecular beam epitaxy VanMil BL, Tompkins RP, Feng K, Swartz CH, Giles NC, Myers TH Journal of Vacuum Science & Technology B, 23(4), 1814, 2005 |
| 5 |
High temperature limitations for GaN growth by rf-plasma assisted molecular beam epitaxy: Effects of active nitrogen species, surface polarity, hydrogen, and excess Ga-overpressure VanMil BL, Guo HC, Holbert LJ, Lee K, Myers TH, Liu T, Korakakis D Journal of Vacuum Science & Technology B, 22(4), 2149, 2004 |
| 6 |
Use of high temperature hydrogen annealing to remove sub-surface damage in bulk GaN Myers TH, VanMil BL, Holbert LJ, Peng CY, Stinespring CD, Alam J, Freitas JA, Dmitriev VA, Pechnikov A, Shapovalova Y, Ivantsov V Journal of Crystal Growth, 246(3-4), 244, 2002 |
| 7 |
Point defect modification in wide band gap semiconductors through interaction with high-energy electrons: Is reflection high-energy electron diffraction truly benign? Myers TH, Ptak AJ, VanMil BL, Moldovan M, Treado PJ, Nelson MP, Ribar JM, Zugates CT Journal of Vacuum Science & Technology B, 18(4), 2295, 2000 |