검색결과 : 14건
| No. | Article |
|---|---|
| 1 |
Characterization of high dose Mn, Fe, and Ni implantation into p-GaN Pearton SJ, Overberg ME, Thaler G, Abernathy CR, Theodoropoulou N, Hebard AF, Chu SNG, Wilson RG, Zavada JM, Polyakov AY, Osinsky AV, Norris PE, Chow PP, Wowchack AM, Van Hove JM, Park YD Journal of Vacuum Science & Technology A, 20(3), 721, 2002 |
| 2 |
High current, common-base GaN/AlGaN heterojunction bipolar transistors Cao XA, Dang GT, Zhang AP, Ren F, Van Hove JM, Klaassen JJ, Polley CJ, Wowchak AM, Chow PP, King DJ, Abernathy CR, Pearton SJ Electrochemical and Solid State Letters, 3(3), 144, 2000 |
| 3 |
Common-base operation of GaN bipolar junction transistors Cao XA, Dang GT, Zhang AP, Ren F, Abernathy CR, Pearton SJ, Van Hove JM, Klaassen JJ, Polley CJ, Wowchack AM, Chow PP, King DJ, Chu SNG Electrochemical and Solid State Letters, 3(7), 333, 2000 |
| 4 |
Cl-2/Ar high-density-plasma damage in GaN Schottky diodes Zhang AP, Dang G, Ren F, Cao XA, Cho H, Lambers ES, Pearton SJ, Shul RJ, Zhang L, Baca AG, Hickman R, Van Hove JM Journal of the Electrochemical Society, 147(2), 719, 2000 |
| 5 |
Effect of N-2 discharge treatment on AlGaN/GaN high electron mobility transistor ohmic contacts using inductively coupled plasma Zhang AP, Dang GT, Ren F, Van Hove JM, Klaassen JJ, Chow PP, Cao XA, Pearton SJ Journal of Vacuum Science & Technology A, 18(4), 1149, 2000 |
| 6 |
GaN/AlGaN HBT fabrication Ren F, Han J, Hickman R, Van Hove JM, Chow PP, Klaassen JJ, LaRoche JR, Jung KB, Cho H, Cao XA, Donovan SM, Kopf RF, Wilson RG, Baca AG, Shul RJ, Zhang L, Willison CG, Abernathy CR, Pearton SJ Solid-State Electronics, 44(2), 239, 2000 |
| 7 |
GaNPN junction issues and developments Hickman R, Van Hove JM, Chow PP, Klaassen JJ, Wowchak AM, Polley CJ, King DJ, Ren F, Abernathy CR, Pearton SJ, Jung KB, Cho H, La Roche JR Solid-State Electronics, 44(2), 377, 2000 |
| 8 |
High temperature characteristics of GaN-based Heterojunction Bipolar Transistors and Bipolar Junction Transistors Cao XA, Van Hove JM, Klaassen JJ, Polley CJ, Wowchack AM, Chow PP, King DJ, Ren F, Dang G, Zhang AP, Abernathy CR, Pearton SJ Solid-State Electronics, 44(4), 649, 2000 |
| 9 |
Effect of thermal stability of GaN epi-layer on the Schottky diodes Lee KN, Cao XA, Abernathy CR, Pearton SJ, Zhang AP, Ren F, Hickman R, Van Hove JM Solid-State Electronics, 44(7), 1203, 2000 |
| 10 |
Simulation of GaN/AlGaN heterojunction bipolar transistors: part I -npn structures Cao XA, Van Hove JM, Klaassen JJ, Polley CJ, Wowchak AM, Chow PP, King DJ, Zhang AP, Dang G, Monier C, Pearton SJ, Ren F Solid-State Electronics, 44(7), 1255, 2000 |