검색결과 : 17건
| No. | Article |
|---|---|
| 1 |
Comprehensive understanding of charge lateral migration in 3D SONOS memories Liu LF, Arreghini A, Van den Bosch G, Pan LY, Van Houdt J Solid-State Electronics, 116, 95, 2016 |
| 2 |
Comprehensive investigation of the impact of lateral charge migration on retention performance of planar and 3D SONOS devices Maconi A, Arreghini A, Compagnoni CM, Van den Bosch G, Spinelli AS, Van Houdt J, Lacaita AL Solid-State Electronics, 74, 64, 2012 |
| 3 |
Charge-based nonvolatile memory: Near the end of the roadmap? Van Houdt J Current Applied Physics, 11(2), E21, 2011 |
| 4 |
A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology Cacciato A, Breuil L, Dekker H, Zahid M, Kar GS, Everaert JL, Schoofs G, Shi X, Van den Bosch G, Jurczak M, Debusschere I, Van Houdt J, Cockburn A, Date L, Xa LQ, Le M, Lee W Electrochemical and Solid State Letters, 14(7), H271, 2011 |
| 5 |
Lanthanide Aluminates as Dielectrics for Non-Volatile Memory Applications: Material Aspects Adelmann C, Swerts J, Richard O, Conard T, Popovici M, Meersschaut J, Afanas'ev VV, Breuil L, Cacciato A, Opsomer K, Brijs B, Tielens H, Pourtois G, Bender H, Jurczak M, Van Houdt J, Van Elshocht S, Kittl JA Journal of the Electrochemical Society, 158(8), H778, 2011 |
| 6 |
Rare-earth aluminates as a charge trapping materials for NAND flash memories: Integration and electrical evaluation Suhane A, Cacciato A, Richard O, Arreghini A, Adelmann C, Swerts J, Rothschild O, Van den Bosch G, Breuil L, Bender H, Jurczak M, Debusschere I, Kittl JA, De Meyer K, Van Houdt J Solid-State Electronics, 65-66, 177, 2011 |
| 7 |
A consistent model for oxide trap profiling with the Trap Spectroscopy by Charge Injection and Sensing (TSCIS) technique Cho M, Degraeve R, Roussel P, Govoreanu B, Kaczer B, Zahid MB, Simoen E, Arreghini A, Jurczak M, Van Houdt J, Groeseneken G Solid-State Electronics, 54(11), 1384, 2010 |
| 8 |
Foreword Van Houdt J Solid-State Electronics, 52(4), 549, 2008 |
| 9 |
Performance and reliability of HfAlOx-based interpoly dielectrics for floating-gate Flash memory Govoreanu B, Wellekens D, Haspeslagh L, Brunco DP, De Vos J, Aguado DR, Blomme P, van der Zanden K, Van Houdt J Solid-State Electronics, 52(4), 557, 2008 |
| 10 |
Physical understanding and modeling of SANOS retention in programmed state Furnemont A, Cacciato A, Breuil L, Rosmeulen M, Maes H, De Meyer K, Van Houdt J Solid-State Electronics, 52(4), 577, 2008 |