화학공학소재연구정보센터
검색결과 : 25건
No. Article
1 Alkali-Glass Behavior in Honeycomb-Type Layered Li3-xNaxNi2SbO6 Solid Solution
Vallee C, Saubanere M, Sanz-Camacho P, Biecher Y, Fraisse B, Suard E, Rousse G, Carlier D, Berthelot R
Inorganic Chemistry, 58(17), 11546, 2019
2 Structural and dielectric characterization of sputtered Tantalum Titanium Oxide thin films for high temperature capacitor applications
Rouahi A, Challali F, Dakhlaoui I, Vallee C, Salimy S, Jomni F, Yangui B, Besland MP, Goullet A, Sylvestre A
Thin Solid Films, 606, 127, 2016
3 FTIR as a simple tool to quantify unconverted lignin from chars in biomass liquefaction process: Application to SC ethanol liquefaction of pine wood
Bui NQ, Fongarland P, Rataboul F, Dartiguelongue C, Charon N, Vallee C, Essayem N
Fuel Processing Technology, 134, 378, 2015
4 Sorbic Acid as a Renewable Resource for Atom-Economic and Selective Production of p-Toluic Acid and Alkyl-p-Toluates: Intermediates to Bioterephthalic Acid and Esters
Berard S, Vallee C, Delcroix D
Industrial & Engineering Chemistry Research, 54(28), 7164, 2015
5 Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
Piallat F, Beugin V, Gassilloud R, Dussault L, Pelissier B, Leroux C, Caubet P, Vallee C
Applied Surface Science, 303, 388, 2014
6 Impact of Oxidation on Ge2Sb2Te5 and GeTe Phase-Change Properties
Gourvest E, Pelissier B, Vallee C, Roule A, Lhostis S, Maitrejean S
Journal of the Electrochemical Society, 159(4), H373, 2012
7 Resistive switching of HfO2-based Metal-Insulator-Metal diodes: Impact of the top electrode material
Bertaud T, Walczyk D, Walczyk C, Kubotsch S, Sowinska M, Schroeder T, Wenger C, Vallee C, Gonon P, Mannequin C, Jousseaume V, Grampeix H
Thin Solid Films, 520(14), 4551, 2012
8 Investigation of HfO2 and ZrO2 for Resistive Random Access Memory applications
Salaun A, Grampeix H, Buckley J, Mannequin C, Vallee C, Gonon P, Jeannot S, Gaumer C, Gros-Jean M, Jousseaume V
Thin Solid Films, 525, 20, 2012
9 Comparative study of non-polar switching behaviors of NiO- and HfO2-based oxide resistive-RAMs
Jousseaume V, Fantini A, Nodin JF, Guedj C, Persico A, Buckley J, Tirano S, Lorenzi P, Vignon R, Feldis H, Minoret S, Grampeix H, Roule A, Favier S, Martinez E, Calka P, Rochat N, Auvert G, Barnes JP, Gonon P, Vallee C, Perniola L, De Salvo B
Solid-State Electronics, 58(1), 62, 2011
10 Influence of induced stress on enrichment kinetic during local Ge condensation of SiGe/SOI mesas
Dechoux N, Damlencourt JF, Rivallin P, Brianceau P, Bernasconi S, Benevent V, Vallee C, Barbe JC, Billon T, Bensahel D
Thin Solid Films, 518, S92, 2010