검색결과 : 17건
| No. | Article |
|---|---|
| 1 |
Influence of fast neutron irradiation on the phase composition and optical properties of homogeneous SiOx and composite Si-SiOx thin films Nesheva D, Fogarassy Z, Fabian M, Hristova-Vasileva T, Sulyok A, Bineva I, Valcheva E, Antonova K, Petrik P Journal of Materials Science, 56(4), 3197, 2021 |
| 2 |
Pulsed laser deposition of thin carbon films on SiO2/Si substrates Milenov T, Dikovska A, Avdeev G, Avramova I, Kirilov K, Karashanova D, Terziyska P, Georgieva B, Arnaudov B, Kolev S, Valcheva E Applied Surface Science, 480, 323, 2019 |
| 3 |
Characterization of Si-SiOx nanocomposite layers by comparative analysis of computer simulated and experimental infra-red transmission spectra Donchev V, Nesheva D, Todorova D, Germanova K, Valcheva E Thin Solid Films, 520(6), 2085, 2012 |
| 4 |
The Role of the Entropy Factor on the Adsorption of an Optical Brightener on Pulp Radeva G, Valcheva E, Veleva S Turkish Journal of Chemistry, 33(2), 241, 2009 |
| 5 |
Thermodynamic aspects of the adsorption of an optical brightener on pulp Radeva G, Veleva S, Valcheva E Journal of Chemical Thermodynamics, 40(3), 529, 2008 |
| 6 |
Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers Paskova T, Darakchieva V, Paskov P, Birch J, Valcheva E, Persson POA, Arnaudov B, Tungasmitta S, Monemar B Journal of Crystal Growth, 281(1), 55, 2005 |
| 7 |
Characterization of mass-transport grown GaN by hydride vapour-phase epitaxy Paskova T, Paskov PP, Goldys EM, Valcheva E, Darakchieva V, Sodervall U, Godlewski M, Zielinski M, Hautakangas S, Saarinen K, Carlstrom CF, Wahab Q, Monemar B Journal of Crystal Growth, 273(1-2), 118, 2004 |
| 8 |
Nanopipes and their relationship to the growth mode in thick HVPE-GaN layers Valcheva E, Paskova T, Monemar B Journal of Crystal Growth, 255(1-2), 19, 2003 |
| 9 |
In-plane epitaxial relationships between a-plane sapphire substrates and GaN layers grown by different techniques Paskova T, Darakchieva V, Valcheva E, Paskov PP, Monemar B, Heuken M Journal of Crystal Growth, 257(1-2), 1, 2003 |
| 10 |
Defect and stress relaxation in HVPE-GaN films using high temperature reactively sputtered AlN buffer Paskova T, Valcheva E, Birch J, Tungasmita S, Persson POA, Paskov PP, Evtimova S, Abrashev M, Monemar B Journal of Crystal Growth, 230(3-4), 381, 2001 |