화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 A novel model of the high-voltage VDMOS for the circuit simulation
Liu SY, Zhu RX, Jia K, Huang D, Sun WF, Zhang CW
Solid-State Electronics, 93, 21, 2014
2 Trench superjunction VDMOS with charge imbalance cells
Sun WF, Zhu J, Qian QS, Cao PF, Liu SY, Su Z, Lu SL, Shi LX
Solid-State Electronics, 64(1), 14, 2011
3 Theoretical analysis of the vertical LOCOS DMOS transistor with process-induced stress enhancement
Reggiani S, Denison M, Gnani E, Gnudi A, Baccarani G, Pendharkar S, Wise R
Solid-State Electronics, 54(9), 950, 2010
4 Evaluation of the ruggedness of power DMOS transistor from electro-thermal simulation of UIS behaviour
Donoval D, Vrbicky A, Marek J, Chvala A, Beno P
Solid-State Electronics, 52(6), 892, 2008
5 Scalable general high voltage MOSFET model including quasi-saturation and self-heating effects
Chauhan YS, Anghel C, Krummenacher F, Maier C, Gillon R, Bakeroot B, Desoete B, Frere S, Desormeaux AB, Sharma A, Declercq M, Ionescu AM
Solid-State Electronics, 50(11-12), 1801, 2006