검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Efficiency enhancement of blue light emitting diodes by eliminating V-defects from InGaN/GaN multiple quantum well structures through GaN capping layer control Tsai SC, Li MJ, Fang HC, Tu CH, Liu CP Applied Surface Science, 439, 1127, 2018 |
| 2 |
Site-specific comparisons of V-defects and threading dislocations in InGaN/GaN multi-quantum-wells grown on SiC and GaN substrates Liu F, Huang L, Kamaladasa R, Picard YN, Preble EA, Paskova T, Evans KR, Davis RF, Porter LM Journal of Crystal Growth, 387, 16, 2014 |
| 3 |
The growth mechanism of micron-size V defects on the hydride vapor phase epitaxy grown undoped GaN films Lin PY, Wu YCS Materials Chemistry and Physics, 80(2), 397, 2003 |
| 4 |
Radiation defects and doping of SiC with phosphorus by Nuclear Transmutation Doping (NTD) Heissenstein H, Sadowski H, Peppermuller C, Helbig R Materials Science Forum, 338-3, 853, 2000 |