| 1 |
Preparation of Patterned Ultrathin TiO2 Films by Langmuir-Blodgett Method Using Mixed Monolayers of Octadecylamine and 1H,1H-Perfluoro-1-dodecanol
Takahashi M, Usui A, Eba H, Tajima K
Chemistry Letters, 46(9), 1396, 2017 |
| 2 |
Growth and strain characterization of high quality GaN crystal by HVPE
Geng HY, Sunakawa H, Sumi N, Yamamoto K, Yamaguchi AA, Usui A
Journal of Crystal Growth, 350(1), 44, 2012 |
| 3 |
Fabrication of freestanding m-plane GaN wafer by using the HVPE technique on an aluminum carbide buffer layer on an m-plane sapphire substrate
Sasaki H, Sunakawa H, Sumi N, Yamamoto K, Usui A
Journal of Crystal Growth, 311(10), 2910, 2009 |
| 4 |
Electron microscopy analysis of dislocation behavior in HVPE-AlGaN layer grown on a stripe-patterned (0001) sapphire substrate
Kuwano N, Kugiyama Y, Nishikouri Y, Sato T, Usui A
Journal of Crystal Growth, 311(10), 3085, 2009 |
| 5 |
Lattice parameters of bulk GaN fabricated by halide vapor phase epitaxy
Darakchieva V, Monemar B, Usui A, Saenger M, Schubert M
Journal of Crystal Growth, 310(5), 959, 2008 |
| 6 |
Thirteenth International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XIII) - 22-26 May 2006 - Phoenix Seagaia Resort, Miyazaki, Japan - Editorial introduction
Onabe K, Usui A, Kobayashi N
Journal of Crystal Growth, 298, 1, 2007 |
| 7 |
Application of XANES for the determination of oxidation states of Co and Pb in natural ferromanganese nodules
Takahashi Y, Usui A, Okumura K, Uruga T, Nomura M, Murakami M, Shimizu H
Chemistry Letters, 31(3), 366, 2002 |
| 8 |
Supersaturation-dependent step-behavior of InGaN grown by metal organic vapor phase epitaxy
Kimura A, Futagawa N, Usui A, Mizuta M
Journal of Crystal Growth, 229(1), 53, 2001 |
