화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Thick AlN layers grown by HVPE
Kovalenkov O, Soukhoveev V, Ivantsov V, Usikov A, Dmitriev V
Journal of Crystal Growth, 281(1), 87, 2005
2 RF performance of HVPE-grown AlGaN/GaN HEMTS
Mastro MA, Tsvetkov D, Soukhoveev V, Usikov A, Dmitriev V, Luo B, Ren F, Baik KH, Pearton SJ
Solid-State Electronics, 48(1), 179, 2004
3 GaN/AlGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates
LaRoche JR, Luo B, Ren F, Baik KH, Stodilka D, Gila B, Abernathy CR, Pearton SJ, Usikov A, Tsvetkov D, Soukhoveev V, Gainer G, Rechnikov A, Dimitriev V, Chen GT, Pan CC, Chyi JI
Solid-State Electronics, 48(1), 193, 2004
4 Hydride vapor phase epitaxy-grown AlGaN/GaN high electron mobility transistors
Mastro MA, Tsvetkov D, Soukhoveev V, Usikov A, Dmitriev V, Luo B, Ren F, Baik KH, Pearton SJ
Solid-State Electronics, 47(6), 1075, 2003
5 Uniformity of dc and rf performance of MBE-grown AlGaN/GaN HEMTS on HVPE-grown buffers
Gillespie JK, Fitch RC, Moser N, Jenkins T, Sewell J, Via D, Crespo A, Dabiran AM, Chow PP, Osinsky A, Mastro MA, Tsvetkov D, Soukhoveev V, Usikov A, Dmitriev V, Luo B, Pearton SJ, Ren F
Solid-State Electronics, 47(10), 1859, 2003