검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Comparison study of ohmic contacts to 4H-silicon carbide in oxidizing ambient for harsh environment gas sensor applications Lee SK, Suh EK, Cho NK, Park HD, Uneus L, Spetz AL Solid-State Electronics, 49(8), 1297, 2005 |
| 2 |
Substrate bias amplification of a SiC junction field effect transistor with a catalytic gate electrode Nakagomi S, Takahashi M, Kokubun Y, Uneus L, Savage S, Wingbrant H, Andersson M, Lundstrom I, Lofdahl M, Spetz AL Materials Science Forum, 457-460, 1507, 2004 |
| 3 |
MISiCFET chemical gas sensors for high temperature and corrosive environment applications Spetz AL, Uneus L, Svenningstorp H, Wingbrant H, Harris CI, Salomonsson P, Tengstrom P, Martensson P, Ljung P, Mattsson M, Visser JH, Ejakov SG, Kubinski D, Ekedahl LG, Lundstrom I, Savage SM Materials Science Forum, 389-3, 1415, 2002 |
| 4 |
The effect of hydrogen diffusion in p- and n-type SiC Schottky diodes at high temperatures Uneus L, Nakagomi S, Linnarsson M, Janson MS, Svensson BG, Yakimova R, Syvajarvi M, Henry A, Janzen E, Ekedahl LG, Lunstrom I, Spetz AL Materials Science Forum, 389-3, 1419, 2002 |
| 5 |
Influence of epitaxial layer on SiC Schottky diode gas sensors operated under high-temperature conditions Nakagomi S, Shinobu H, Uneus L, Lundstrom I, Ekedahl LG, Yakimova R, Syvajarvi M, Henry A, Janzen E, Spetz AL Materials Science Forum, 389-3, 1423, 2002 |
| 6 |
MISiCFET chemical sensors for applications in exhaust gases and flue gases Wingbrant H, Uneus L, Andersson M, Cerda J, Savage S, Svenningstorp H, Salomonsson P, Ljung P, Mattsson M, Visser JH, Kubinski D, Soltis R, Ejakov SG, Moldin D, Lofdahl M, Einehag M, Persson M, Spetz AL Materials Science Forum, 433-4, 953, 2002 |
| 7 |
SiC based gas sensors and their applications Savage S, Svenningstorp H, Uneus L, Kroutchinine A, Tobias P, Ekedahl LG, Lundstrom I, Harris C, Spetz AL Materials Science Forum, 353-356, 747, 2001 |
| 8 |
High temperature gas sensors based on catalytic metal field effect transistors Svenningstorp H, Uneus L, Tobias P, Lundstrom I, Ekedahl LG, Spetz AL Materials Science Forum, 338-3, 1435, 2000 |