| 1 |
Characterization and modelling of layout effects in SiGe channel pMOSFETs from 14 nm UTBB FDSOI technology
Berthelon R, Andrieu F, Ortolland S, Nicolas R, Poiroux T, Baylac E, Dutartre D, Josse E, Claverie A, Haond M
Solid-State Electronics, 128, 72, 2017 |
| 2 |
Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells
Zerveas G, Caruso E, Baccarani G, Czornomaz L, Daix N, Esseni D, Gnani E, Gnudi A, Grassi R, Luisier M, Markussen T, Osgnach P, Palestri P, Schenk A, Selmi L, Sousa M, Stokbro K, Visciarelli M
Solid-State Electronics, 115, 92, 2016 |
| 3 |
Electron mobility in ultra-thin InGaAs channels: Impact of surface orientation and different gate oxide materials
Krivec S, Poljak M, Suligoj T
Solid-State Electronics, 115, 109, 2016 |
| 4 |
A review of special gate coupling effects in long-channel SOI MOSFETs with lightly doped ultra-thin bodies and their compact analytical modeling
Rudenko T, Nazarov A, Kilchytska V, Flandre D
Solid-State Electronics, 117, 66, 2016 |
| 5 |
FinFET and UTBB for RF SOI communication systems
Raskin JP
Solid-State Electronics, 125, 73, 2016 |
| 6 |
Application, modeling and limitations of Y-function based methods for massive series resistance in nanoscale SOI MOSFETs
Karsenty A, Chelly A
Solid-State Electronics, 92, 12, 2014 |
| 7 |
Effect of parasitic elements on UTBB FD SOI MOSFETs RF figures of merit
Arshad MKM, Kilchytska V, Emam M, Andrieu F, Flandre D, Raskin JP
Solid-State Electronics, 97, 38, 2014 |
| 8 |
2D physics-based closed-form modeling of dopant-segregated Schottky barrier UTB MOSFETs
Schwarz M, Kloes A
Solid-State Electronics, 99, 65, 2014 |
| 9 |
Strain engineering of ultra-thin silicon-on-insulator structures using through-buried-oxide ion implantation and crystallization
Ding YJ, Cheng R, Zhou Q, Du AY, Daval N, Nguyen BY, Yeo YC
Solid-State Electronics, 83, 37, 2013 |
| 10 |
Quasi-double gate regime to boost UTBB SO MOSFET performance in analog and sleep transistor applications
Kilchytska V, Bol D, De Vos J, Andrieu F, Flandre D
Solid-State Electronics, 84, 28, 2013 |
