화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Gas-Source Molecular-Beam Epitaxy Growth of High-Quality InGaAsP for 0.98 Mu-M Al-Free InGaAs/InGaAsP/InGaP Laser-Diodes
Liu JS, Chen JG, Lin HH, Tu YK
Journal of Vacuum Science & Technology B, 15(3), 707, 1997
2 Growth of Ingaassb Layers in the Miscibility Gap - Use of Very-Low-Energy Ion Irradiation to Reduce Alloy Decomposition
Kaspi R, Barnett SA, Hultman L
Journal of Vacuum Science & Technology B, 13(3), 978, 1995