| 1 |
Cu filling into trenches with Co (00.2) layer by using high-vacuum magnetron sputtering in N-2-addded Ar gas
Itoh M, Iida H, Uhara Y, Saito S
Applied Surface Science, 354, 124, 2015 |
| 2 |
The evolution and analysis of electrical percolation threshold in nanometer scale thin films deposited by electroless plating
Sabayev V, Croitoru N, Inberg A, Shacham-Diamand Y
Materials Chemistry and Physics, 127(1-2), 214, 2011 |
| 3 |
Selective Chemical Vapor Deposition-Grown Ru for Cu Interconnect Capping Applications
Yang CC, McFeely FR, Wang PC, Chanda K, Edelstein DC
Electrochemical and Solid State Letters, 13(5), D33, 2010 |
| 4 |
Paramagnetic Defect Generation and Microstructure Change in Porous Low-k SiOCH Films with Vacuum Baking
Tanbara K, Kamigaki Y
Journal of the Electrochemical Society, 157(4), G95, 2010 |
| 5 |
Cu Electrodeposition from Methanesulfonate Electrolytes for ULSI and MEMS Applications
Hasan M, Rohan JF
Journal of the Electrochemical Society, 157(5), D278, 2010 |
| 6 |
Liquid-phase epitaxial growth of Ge island on insulator using Ni-imprint-induced Si crystal as seed
Toko K, Sakane T, Tanaka T, Sadoh T, Miyao M
Thin Solid Films, 518, S182, 2010 |
| 7 |
Plasma-surface interactions for advanced plasma etching processes in nanoscale ULSI device fabrication: A numerical and experimental study
Ono K, Ohta H, Eriguchi K
Thin Solid Films, 518(13), 3461, 2010 |
| 8 |
Effect of Organosilane Underlayers on the Effectiveness of NiB Barrier Layers in ULSI Metallization
Yoshino M, Aramaki H, Matsuda I, Okinaka Y, Osaka T
Electrochemical and Solid State Letters, 12(4), D19, 2009 |
| 9 |
Fabrication of Electroless CoWP/NiB Diffusion Barrier Layer on SiO2 for ULSI Devices
Osaka T, Aramaki H, Yoshino M, Ueno K, Matsuda I, Shacham-Diamand Y
Journal of the Electrochemical Society, 156(9), H707, 2009 |
| 10 |
Thin film silver deposition by electroplating for ULSI interconnect applications
Seo JM, Cho SK, Koo HC, Kim SK, Kwon OJ, Kim JJ
Korean Journal of Chemical Engineering, 26(1), 265, 2009 |
