| 1 |
Low temperature epitaxy of high-quality Ge buffer using plasma enhancement via UHV-CVD system for photonic device applications
Alharthi B, Dou W, Grant PC, Grant JM, Morgan T, Mosleh A, Du W, Li BH, Mortazavi M, Naseem H, Yu SQ
Applied Surface Science, 481, 246, 2019 |
| 2 |
Higher order reconstructions of the Ge(001) surface induced by a Ba layer
Koczorowski W, Grzela T, Puchalska A, Radny MW, Jurczyszyn L, Schofield SR, Czajka R, Curson NJ
Applied Surface Science, 435, 438, 2018 |
| 3 |
A multi-regional energy transport and structure model for China's electricity system
Zhang YR, Ma TJ, Guo F
Energy, 161, 907, 2018 |
| 4 |
Structure and composition of Cu(hkl) surfaces exposed to O-2 and emersed from alkaline solutions: Prelude to UHV-EC studies of CO2 reduction at well-defined copper catalysts
Baricuatro JH, Ehlers CB, Cummins KD, Soriaga MP, Stickney JL, Kim YG
Journal of Electroanalytical Chemistry, 716, 101, 2014 |
| 5 |
Engineering the size and density of silicon agglomerates by controlling the initial surface carbonated contamination
Borowik L, Chevalier N, Mariolle D, Martinez E, Bertin F, Chabli A, Barbe JC
Applied Surface Science, 270, 295, 2013 |
| 6 |
Mechanisms of parasitic crystallites formation in ZrB2(0001) buffer layer grown on Si(111)
Fleurence A, Zhang W, Hubault C, Yamada-Takamura Y
Applied Surface Science, 284, 432, 2013 |
| 7 |
Size effect on Ge nanowires growth kinetics by the vapor-liquid-solid mechanism
Renard C, Boukhicha R, Gardes C, Fossard F, Yam V, Vincent L, Bouchier D, Hajjar S, Bubendorff JL, Garreau G, Pirri C
Thin Solid Films, 520(8), 3314, 2012 |
| 8 |
Dopant passivation and work function tuning through attachment of heterogeneous organic monolayers on silicon in ultrahigh vacuum
Cooper AJ, Keyvanfar K, Deberardinis A, Pu L, Bean JC
Applied Surface Science, 257(14), 6138, 2011 |
| 9 |
Surface refinement and electronic properties of graphene layers grown on copper substrate: An XPS, UPS and EELS study
Siokou A, Ravani F, Karakalos S, Frank O, Kalbac M, Galiotis C
Applied Surface Science, 257(23), 9785, 2011 |
| 10 |
Self-aligned inversion-channel In0.75Ga0.25As metal-oxide-semiconductor field-effect-transistors using UHV-Al2O3/Ga2O3(Gd2O3) and ALD-Al2O3 as gate dielectrics
Lin TD, Chiu HC, Chang P, Chang YH, Wu YD, Hong M, Kwo J
Solid-State Electronics, 54(9), 919, 2010 |
