검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Interface trap properties of thermally oxidized n-type 4H-SiC and 6H-SiC Rudenko TE, Osiyuk IN, Tyagulski IP, Olafsson HO, Sveinbjornsson EO Solid-State Electronics, 49(4), 545, 2005 |
| 2 |
New evidence of interfacial oxide traps in n-type 4H-and 6H-SiC MOS structures Olafsson HO, Sveinbjornsson EO, Rudenko TE, Kilchytska VI, Tyagulski IP, Osiyuk IN Materials Science Forum, 389-3, 1001, 2002 |
| 3 |
A study of the shallow electron traps at the 4H-SiC/SiO2 interface Olafsson HO, Sveinbjornsson EO, Rudenko TE, Kilchytska VI, Tyagulski IP, Osiyuk IN Materials Science Forum, 433-4, 547, 2002 |
| 4 |
Shallow dopant and surface levels in 6H-SiC MOS structures studied by thermally stimulated current technique Lysenko VS, Osiyuk IP, Rudenko TE, Tyagulski IP, Sveinbjornsson EO, Olafsson HO Materials Science Forum, 353-356, 479, 2001 |
| 5 |
Thermally activated processes in the buried oxide of SIMOX SOI structures and devices Lysenko VS, Nazarov AN, Kilchytska VI, Osiyuk IN, Tyagulski IP, Gomeniuk YV, Barchuk IP Solid-State Electronics, 45(4), 575, 2001 |