| 1 |
Engineering the band gap of LaCrO3 doping with transition metals (Co, Pd, and Ir)
Polat O, Durmus Z, Coskun FM, Coskun M, Turut A
Journal of Materials Science, 53(5), 3544, 2018 |
| 2 |
The photovoltaic impact of atomic layer deposited TiO2 interfacial layer on Si-based photodiodes
Karabulut A, Orak I, Turut A
Solid-State Electronics, 144, 39, 2018 |
| 3 |
The performance of the anthraquinone/p-Si and the pyridine/p-Si rectifying device under X-ray irradiation
Sahin Y, Aydogan S, Ekinci D, Turut A
Materials Chemistry and Physics, 183, 516, 2016 |
| 4 |
The electrical characterizations and illumination response of Co/N-type GaP junction device
Orak I, Ejderha K, Turut A
Current Applied Physics, 15(9), 1054, 2015 |
| 5 |
The effect of annealing temperature on the electrical characterization of Co/n type GaP Schottky diode
Orak I, Ejderha K, Sonmez E, Alanyalioglu M, Turut A
Materials Research Bulletin, 61, 463, 2015 |
| 6 |
Electrical and photoelectrical properties of Ag/n-type Si metal/semiconductor contact with organic interlayer
Ozerden E, Ocak YS, Tombak A, Kilicoglu T, Turut A
Thin Solid Films, 597, 14, 2015 |
| 7 |
The origin of negative capacitance in Au/n-GaAs Schottky barrier diodes (SBDs) prepared by photolithography technique in the wide frequency range
Korucu D, Turut A, Altindal S
Current Applied Physics, 13(6), 1101, 2013 |
| 8 |
Electronic parameters of high barrier Au/Rhodamine-101/n-Inp Schottky diode with organic interlayer
Gullu O, Aydogan S, Turut A
Thin Solid Films, 520(6), 1944, 2012 |
| 9 |
Current-voltage characteristics of Al/Rhodamine-101/n-GaAs structures in the wide temperature range
Vural O, Safak Y, Altindal S, Turut A
Current Applied Physics, 10(3), 761, 2010 |
| 10 |
n-type InP Schottky diodes with organic thin layer: Electrical and interfacial properties
Gullu O, Turut A
Journal of Vacuum Science & Technology B, 28(3), 466, 2010 |
