| 1 |
Structural comparison between MgO/Fe(001) and MgO/Fe(001)-p(1 x 1)0 interfaces for magnetic tunneling junctions: An Auger electron diffraction study
Cantoni M, Boseggia S, Petti D, Cattoni A, Bertacco R
Applied Surface Science, 305, 167, 2014 |
| 2 |
Preparation of large-area molecular junctions with metallic conducting Langmuir-Blodgett films
Mochizuki K, Ohnuki H, Shimizu D, Imakubo T, Tsuya D, Izumi M
Thin Solid Films, 554, 84, 2014 |
| 3 |
Bias-voltage controlled resistance in a magnetic tunneling junction with an inserted thin metallic layer
Chen SP
Thin Solid Films, 537, 198, 2013 |
| 4 |
The influence of the combination of coherent and sequential tunneling on the tunneling magnetoresistance in a ferromagnet-metal-insulator-ferromagnet tunneling junction
Chen SP
Thin Solid Films, 519(23), 8215, 2011 |
| 5 |
Tunneling magnetoresistance in exchange-biased CoFeB/AlOx/Co/IrMn junctions
Chen YT, Tseng JY, Jen SU, Tsai TL, Yao YD
Applied Surface Science, 257(5), 1484, 2010 |
| 6 |
Current conduction models in the high temperature single-electron transistor
Dubuc C, Beaumont A, Beauvais J, Drouin D
Solid-State Electronics, 53(5), 478, 2009 |
| 7 |
Effect of unoxidized residual Al at the boundary of Co/Al-oxide/Co junction on TMR estimated by LMTO band calculation
Shiiki K, Sakaguchi N, Kaiju H
Thin Solid Films, 505(1-2), 64, 2006 |
| 8 |
Tunneling conductivity of one- and two-component alkanethiol bilayers in Hg-Hg junctions
York RL, Slowinski K
Journal of Electroanalytical Chemistry, 550-551, 327, 2003 |
| 9 |
Plasma oxidation of the insulation layer in the magnetic tunneling junctions
Kyung H, Yoo CS, Yoon CS, Kim CK
Materials Chemistry and Physics, 77(2), 583, 2003 |
| 10 |
A new rf plasma oxidation method for the insulating AlOx barrier in magnetic tunneling junctions
Yoon KS, Yang JY, Park JH, Choi WJ, Kim YD, Kim CO, Hong JP
Current Applied Physics, 2(5), 355, 2002 |
