| 1 |
Atomic nature of the Schottky barrier height formation of the Ag/GaAs(001)-2 x 4 interface: An in-situ synchrotron radiation photoemission study
Cheng CP, Chen WS, Lin KY, Wei GJ, Cheng YT, Lin YH, Wan HW, Pi TW, Tung RT, Kwo J, Hong MW
Applied Surface Science, 393, 294, 2017 |
| 2 |
Schottky barrier height systematics studied by partisan interlayer
Long W, Li Y, Tung RT
Thin Solid Films, 557, 254, 2014 |
| 3 |
Effect of metal interaction on the Schottky barrier height on adsorbate-terminated silicon surfaces
Li Y, Long W, Tung RT
Applied Surface Science, 284, 720, 2013 |
| 4 |
Electrostatic properties of ideal and non-ideal polar organic monolayers: Implications for electronic devices
Natan A, Kronik L, Haick H, Tung RT
Advanced Materials, 19(23), 4103, 2007 |
| 5 |
Controlling semiconductor/metal junction barriers by incomplete, nonideal molecular monolayers
Haick H, Ambrico M, Ligonzo T, Tung RT, Cahen D
Journal of the American Chemical Society, 128(21), 6854, 2006 |
| 6 |
Epitaxial silicide interfaces in microelectronics
Tung RT, Ohmi S
Thin Solid Films, 369(1-2), 233, 2000 |
| 7 |
Morphology of TiSi2 Films on Si Formed from Co-Deposited Ti and Si
Herner SB, Krishnamoorthy V, Naman A, Jones KS, Gossmann HJ, Tung RT
Thin Solid Films, 302(1-2), 127, 1997 |
