검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Salt-responsive gut commensal modulates T(H)17 axis and disease Wilck N, Matus MG, Kearney SM, Olesen SW, Forslund K, Bartolomaeus H, Haase S, Mahler A, Balogh A, Marko L, Vedenskaya OV, Kleiner FH, Tsvetkov D, Klug L, Costea PI, Sunagawa S, Maier L, Rakova N, Schatz V, Neubert P, Fratzer C, Krannich A, Gollasch M, Grohme DA, Corte-Real BF, Gerlach RG, Basic M, Typas A, Wu C, Titze JM, Jantsch J, Boschmann M, Dechend R, Kleinewietfeld M, Kempa S, Bork P, Linker RA, Alm EJ, Muller DN Nature, 551(7682), 585, 2017 |
| 2 |
Dislocation analysis in homoepitaxial GaInN/GaN light emitting diode growth Detchprohm T, Xia Y, Xi Y, Zhu M, Zhao W, Li Y, Schubert EF, Liu L, Tsvetkov D, Hanser D, Wetzel C Journal of Crystal Growth, 298, 272, 2007 |
| 3 |
Surface preparation of substrates from bulk GaN crystals Hanser D, Tutor M, Preble E, Williams M, Xu XP, Tsvetkov D, Liu LH Journal of Crystal Growth, 305(2), 372, 2007 |
| 4 |
RF performance of HVPE-grown AlGaN/GaN HEMTS Mastro MA, Tsvetkov D, Soukhoveev V, Usikov A, Dmitriev V, Luo B, Ren F, Baik KH, Pearton SJ Solid-State Electronics, 48(1), 179, 2004 |
| 5 |
GaN/AlGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates LaRoche JR, Luo B, Ren F, Baik KH, Stodilka D, Gila B, Abernathy CR, Pearton SJ, Usikov A, Tsvetkov D, Soukhoveev V, Gainer G, Rechnikov A, Dimitriev V, Chen GT, Pan CC, Chyi JI Solid-State Electronics, 48(1), 193, 2004 |
| 6 |
Hydride vapor phase epitaxy-grown AlGaN/GaN high electron mobility transistors Mastro MA, Tsvetkov D, Soukhoveev V, Usikov A, Dmitriev V, Luo B, Ren F, Baik KH, Pearton SJ Solid-State Electronics, 47(6), 1075, 2003 |
| 7 |
Uniformity of dc and rf performance of MBE-grown AlGaN/GaN HEMTS on HVPE-grown buffers Gillespie JK, Fitch RC, Moser N, Jenkins T, Sewell J, Via D, Crespo A, Dabiran AM, Chow PP, Osinsky A, Mastro MA, Tsvetkov D, Soukhoveev V, Usikov A, Dmitriev V, Luo B, Pearton SJ, Ren F Solid-State Electronics, 47(10), 1859, 2003 |
| 8 |
Comparison of AlGaN/GaN high electron mobility transistors grown on AlN/SiC templates or sapphire Johnson JW, Han J, Baca AG, Briggs RD, Shul RJ, Wendt JR, Monier C, Ren F, Luo B, Chu SNG, Tsvetkov D, Dmitriev V, Pearton SJ Solid-State Electronics, 46(4), 513, 2002 |
| 9 |
Growth of SiC and GaN on porous buffer layers Mynbaeva M, Savkina N, Tregubova A, Scheglov M, Lebedev A, Zubrilov A, Titkov A, Kryganovski A, Mynbaev K, Seredova N, Tsvetkov D, Stepanov S, Cherenkov A, Kotousova I, Dimitriev VA Materials Science Forum, 338-3, 225, 2000 |