검색결과 : 5건
No. | Article |
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1 |
Impact of fin length on threshold voltage modulation by back bias for Independent double-gate tunnel fin field-effect transistors Mizubayashi W, Fukuda K, Mori T, Endo K, Liu YX, Matsukawa T, O'uchi S, Ishikawa Y, Migita S, Morita Y, Tanabe A, Tsukada J, Yamauchi H, Masahara M, Ota H Solid-State Electronics, 111, 62, 2015 |
2 |
Electro-Deposition of Carbon Structures at Mid Voltage and Room Temperature Using Ethanol/Aqueous Solutions Tsukada J, Zanin H, Barbosa LCA, da Silva GA, Ceragioli HJ, Peterlevitz AC, Teofilo RF, Baranauskas V Journal of the Electrochemical Society, 159(3), D159, 2012 |
3 |
Enhancement of FinFET performance using 25-nm-thin sidewall spacer grown by atomic layer deposition Endo K, Ishikawa Y, Matsukawa T, Liu YX, O'uchi S, Sakamoto K, Tsukada J, Yamauchi H, Masahara M Solid-State Electronics, 74, 13, 2012 |
4 |
Dual metal gate FinFET integration by Ta/Mo diffusion technology for V-t reduction and multi-V-t CMOS application Matsukawa T, Endo K, Liu YX, O'uchi S, Ishikawa Y, Yamauchi H, Tsukada J, Ishii K, Sakamoto K, Suzuki E, Masahara M Solid-State Electronics, 53(7), 701, 2009 |
5 |
Suppressive effects of swainsonine and N-butyldeoxynojirimycin on human bone marrow neutrophil maturation Misago M, Tsukada J, Fukuda MN, Eto S Biochemical and Biophysical Research Communications, 269(1), 219, 2000 |