화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Impact of fin length on threshold voltage modulation by back bias for Independent double-gate tunnel fin field-effect transistors
Mizubayashi W, Fukuda K, Mori T, Endo K, Liu YX, Matsukawa T, O'uchi S, Ishikawa Y, Migita S, Morita Y, Tanabe A, Tsukada J, Yamauchi H, Masahara M, Ota H
Solid-State Electronics, 111, 62, 2015
2 Electro-Deposition of Carbon Structures at Mid Voltage and Room Temperature Using Ethanol/Aqueous Solutions
Tsukada J, Zanin H, Barbosa LCA, da Silva GA, Ceragioli HJ, Peterlevitz AC, Teofilo RF, Baranauskas V
Journal of the Electrochemical Society, 159(3), D159, 2012
3 Enhancement of FinFET performance using 25-nm-thin sidewall spacer grown by atomic layer deposition
Endo K, Ishikawa Y, Matsukawa T, Liu YX, O'uchi S, Sakamoto K, Tsukada J, Yamauchi H, Masahara M
Solid-State Electronics, 74, 13, 2012
4 Dual metal gate FinFET integration by Ta/Mo diffusion technology for V-t reduction and multi-V-t CMOS application
Matsukawa T, Endo K, Liu YX, O'uchi S, Ishikawa Y, Yamauchi H, Tsukada J, Ishii K, Sakamoto K, Suzuki E, Masahara M
Solid-State Electronics, 53(7), 701, 2009
5 Suppressive effects of swainsonine and N-butyldeoxynojirimycin on human bone marrow neutrophil maturation
Misago M, Tsukada J, Fukuda MN, Eto S
Biochemical and Biophysical Research Communications, 269(1), 219, 2000