화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Fabrication of (111)-oriented Si layers on SiO2 substrates by an aluminum-induced crystallization method and subsequent growth of semiconducting BaSi2 layers for photovoltaic application
Tsukada D, Matsumoto Y, Sasaki R, Takeishi M, Saito T, Usami N, Suemasu T
Journal of Crystal Growth, 311(14), 3581, 2009
2 Semiconductor(BaSi2)/metal(CoSi2) Schottky-barrier structures epitaxially grown on Si(111) substrates by molecular beam epitaxy
Suemasu T, Sasase M, Ichikawa Y, Kobayashi M, Tsukada D
Journal of Crystal Growth, 310(6), 1250, 2008