검색결과 : 17건
| No. | Article |
|---|---|
| 1 |
Strong Fermi-level pinning induced by argon inductively coupled plasma treatment and post-metal deposition annealing on 4H-SiC Tsui BY, Cheng JC, Yen CT, Lee CY Solid-State Electronics, 133, 83, 2017 |
| 2 |
A study on NiGe-contacted Ge n(+)/p Ge shallow junction prepared by dopant segregation technique Tsui BY, Shih JJ, Lin HC, Lin CY Solid-State Electronics, 107, 40, 2015 |
| 3 |
Effect of surface preparation on the radiation hardness of high-dielectric constant gate dielectric Tsui BY, Su TT, Shew BY, Huang YT Solid-State Electronics, 81, 119, 2013 |
| 4 |
Improvement of the Thermal Stability of NiSi by Germanium Ion Implantation Tsui BY, Hsieh CM, Hung YR, Yang Y, Shen R, Cheng S, Lin T Journal of the Electrochemical Society, 157(2), H137, 2010 |
| 5 |
Trigate TiN Nanocrystal Memory with High-k Blocking Dielectric and High Work Function Gate Electrode Lu CP, Tsui BY, Luo CK, Lin CH, Tzeng PJ, Wang CC, Tsai MJ Electrochemical and Solid State Letters, 12(3), H70, 2009 |
| 6 |
Thermal Stability Improvement of NiSi on Gate by High Dosage Germanium Implantation Hsieh CM, Tsui BY, Hung YR, Yang Y, Shen R, Cheng S, Lin T Electrochemical and Solid State Letters, 12(6), H226, 2009 |
| 7 |
Investigation of molybdenum nitride gate on SiO2 and HfO2 for MOSFET application Tsui BY, Huang CF, Lu CH Journal of the Electrochemical Society, 153(3), G197, 2006 |
| 8 |
Optimization of back side cleaning process to eliminate copper contamination Chou WY, Tsui BY, Kuo CW, Kang TK Journal of the Electrochemical Society, 152(2), G131, 2005 |
| 9 |
Electrical stability and reliability of ultralow dielectric constant porous carbon-doped oxide film for copper interconnect Fang KL, Tsui BY Journal of the Electrochemical Society, 152(10), G766, 2005 |
| 10 |
Simulation study of carbon nanotube field emission display with under-gate and planar-gate structures Lan YC, Lee CT, Hu Y, Chen SH, Lee CC, Tsui BY, Lin TL Journal of Vacuum Science & Technology B, 22(3), 1244, 2004 |