화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 Insight and control of the chemical vapor deposition growth parameters and morphological characteristics of graphene/Mo2C heterostructures over liquid catalyst
Chaitoglou S, Tsipas P, Speliotis T, Kordas G, Vavouliotis A, Dimoulas A
Journal of Crystal Growth, 495, 46, 2018
2 AB stacked few layer graphene growth by chemical vapor deposition on single crystal Rh(111) and electronic structure characterization
Kordatos A, Kelaidis N, Giamini SA, Marquez-Velasco J, Xenogiannopoulou E, Tsipas P, Kordas G, Dimoulas A
Applied Surface Science, 369, 251, 2016
3 Experimental investigation of metallic thin film modification of nickel substrates for chemical vapor deposition growth of single layer graphene at low temperature
Giamini SA, Marquez-Velasco J, Sakellis I, Tsipas P, Kelaidis N, Tsoutsou D, Boukos N, Kantarelou V, Xenogiannopoulou E, Speliotis T, Aretouli K, Kordas G, Dimoulas A
Applied Surface Science, 385, 554, 2016
4 Metal-oxide-semiconductor devices on p-type Ge with La2O3 and ZrO2/La2O3 as gate dielectric and the effect of postmetallization anneal
Galata SF, Mavrou G, Tsipas P, Sotiropoulos A, Panayiotatos Y, Dimoulas A
Journal of Vacuum Science & Technology B, 27(1), 246, 2009
5 Investigation of voltage dependent relaxation, charge trapping, and stress induced leakage current effects in HfO2/Dy2O3 gate stacks grown on Ge (100) substrates
Rahman MS, Evangelou EK, Androulidakis II, Dimoulas A, Mavrou G, Tsipas P
Journal of Vacuum Science & Technology B, 27(1), 439, 2009
6 Germanium FETs and capacitors with rare earth CeO2/HfO2 gates
Dimoulas A, Panayiotatos Y, Sotiropoulos A, Tsipas P, Brunco DP, Nicholas G, Van Steenbergen J, Bellenger F, Houssa M, Caymax M, Meuris M
Solid-State Electronics, 51(11-12), 1508, 2007