| 1 |
Characteristics of metal-gate metal-insulator-semiconductor capacitor with ZrN capping layer fabricated by high-power impulse magnetron sputtering
Tsai JR, Juan PC, Chen PJ
Thin Solid Films, 618, 55, 2016 |
| 2 |
Optimization of electrical properties of Al/LaAlO3/indium tin oxide capacitor by adjusting oxygen pressures in pulsed laser deposition and applying post-deposition annealing at low temperatures
Tsai JR, Feng WS, Chien PH, Liu KC
Thin Solid Films, 555, 153, 2014 |
| 3 |
Structural and optical properties of zirconia thin films deposited by reactive high-power impulse magnetron sputtering
Zhao XL, Jin J, Cheng JC, Lee JW, Wu KH, Lin KC, Tsai JR, Liu KC
Thin Solid Films, 570, 404, 2014 |
| 4 |
Modeling of phosphorus deactivation in polysilicon for simulation of memory process in nanometer era
Chang RD, Lin CH, Ma CC, Tsai JR
Solid-State Electronics, 75, 16, 2012 |
| 5 |
Defect passivation by O-2 plasma treatment on high-k dielectric HfO2 films at room temperature
Liu KC, Tsai JR, Lin WK, Li CS, Chen JN
Thin Solid Films, 519(15), 5110, 2011 |
| 6 |
Dose loss of phosphorus due to interface segregation in silicon-on-insulator substrates
Chang RD, Ma CC, Tsai JR
Journal of Vacuum Science & Technology B, 28(6), 1158, 2010 |
| 7 |
Investigation of SiOxCy film as the encapsulation layer for full transparent OLED using hollow cathode discharge plasma at room temperature
Liu KC, Cheng HL, Tsai JR, Chiang YL, Hsieh YC, Jan DJ
Thin Solid Films, 518(22), 6195, 2010 |
