검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Nucleation of 3C-SiC associated with threading edge dislocations during chemical vapor deposition Abadier M, Berechman RA, Neudeck PG, Trunek AJ, Skowronski M Journal of Crystal Growth, 347(1), 45, 2012 |
| 2 |
Increased nitrogen doping of thin lateral SiC cantilevers Trunek AJ, Neudeck PG, Matocha K, Dunne G Journal of Crystal Growth, 310(7-9), 1794, 2008 |
| 3 |
Dislocations in III-nitride films grown on 4H-SiC mesas with and without surface steps Bassim ND, Twigg ME, Mastro MA, Eddy CR, Zega TJ, Henry RL, Culbertson JC, Holm RT, Neudeck P, Powell JA, Trunek AJ Journal of Crystal Growth, 304(1), 103, 2007 |
| 4 |
Step structures produced by hydrogen etching of initially step-free (0001) 4H-SiC mesas Powell JA, Neudeck PG, Trunek AJ, Abel PB Materials Science Forum, 483, 753, 2005 |
| 5 |
Step free surface heteroepitaxy of 3C-SiC layers on patterned 4H/6H-SiC mesas and cantilevers Neudeck PG, Powell JA, Trunek AJ, Spry DJ Materials Science Forum, 457-460, 169, 2004 |
| 6 |
Comparative growth behavior of 3C-SiC mesa heterofilms with and without extended defects Trunek AJ, Neudeck PG, Powell JA, Spry DJ Materials Science Forum, 457-460, 261, 2004 |
| 7 |
High breakdown field P-type 3C-SiC Schottky diodes grown on step-free 4H-SiC mesas Spry DJ, Trunek AJ, Neudeck PG Materials Science Forum, 457-460, 1061, 2004 |
| 8 |
Growth of defect-free 3C-SiC on 4H-and 6H-SiC mesas using step-free surface heteroepitaxy Neudeck PG, Powell JA, Trunek AJ, Huang XRR, Dudley M Materials Science Forum, 389-3, 311, 2002 |
| 9 |
Characterization of 3C-SiC films grown on 4H-and 6H-SiC substrate mesas during step-free surface hetero-epitaxy Neudeck PG, Powell JA, Spry DJ, Trunek AJ, Huang XR, Vetter WM, Dudley M, Skowronski M, Liu JQ Materials Science Forum, 433-4, 213, 2002 |