검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
HfO2-based gate stacks transport mechanisms and parameter extraction Coignus J, Leroux C, Clerc R, Truche R, Ghibaudo G, Reimbold G, Boulanger F Solid-State Electronics, 54(9), 972, 2010 |
| 2 |
High performance 70 nm gate length germanium-on-insulator pMOSFET with high-k/metal gate Romanjek K, Hutin L, Le Royer C, Pouydebasque A, Jaud MA, Tabone C, Augendre E, Sanchez L, Hartmann JM, Grampeix H, Mazzocchi V, Soliveres S, Truche R, Clavelier L, Scheiblin P, Garros X, Reimbold G, Vinet M, Boulanger F, Deleonibus S Solid-State Electronics, 53(7), 723, 2009 |
| 3 |
105 nm Gate length pMOSFETs with high-K and metal gate fabricated in a Si process line on 200 mm GeOI wafers Le Royer C, Clavelier L, Tabone C, Romanjek K, Deguet C, Sanchez L, Hartmann JM, Roure MC, Grampeix H, Soliveres S, Le Carval G, Truche R, Pouydebasque A, Vinet M, Deleonibus S Solid-State Electronics, 52(9), 1285, 2008 |
| 4 |
Backside and frontside depth profiling of B delta doping, at low energy, using new and previous magnetic SIMS instruments Laugier F, Hartmann JM, Moriceau H, Holliger P, Truche R, Dupuy JC Applied Surface Science, 231-2, 668, 2004 |
| 5 |
A two steps CVD process for the growth of silicon nano-crystals Mazen F, Baron T, Papon AM, Truche R, Hartmann JM Applied Surface Science, 214(1-4), 359, 2003 |