화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Selective area growth of N-polar GaN nanorods by plasma-assisted MBE on micro-cone-patterned c-sapphire substrates
Jmerik VN, Kuznetsova NV, Nechaev DV, Shubina TV, Kirilenko DA, Troshkov SI, Davydov VY, Smirnov AN, Ivanov SV
Journal of Crystal Growth, 477, 207, 2017
2 Pulsed growth techniques in plasma-assisted molecular beam epitaxy of AlxGa1-xN layers with medium Al content (x=0.4-0.6)
Nechaev DV, Brunkov PN, Troshkov SI, Jmerik VN, Ivanov SV
Journal of Crystal Growth, 425, 9, 2015
3 Fast AlGaN growth in a whole composition range in planetary reactor
Lundin WV, Nikolaev AE, Rozhavskaya MM, Zavarin EE, Sakharov AV, Troshkov SI, Yagovkina MA, Tsatsulnikov AF
Journal of Crystal Growth, 370, 7, 2013
4 Role of strain in growth kinetics of AlGaN layers during plasma-assisted molecular beam epitaxy
Mizerov AM, Jmerik VN, Yagovkina MA, Troshkov SI, Kop'ev PS, Ivanov SV
Journal of Crystal Growth, 323(1), 68, 2011