화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Analysis of degradation mechanisms in AlInN/GaN HEMTs by electroluminescence technique
Berthet F, Petitdidier S, Guhel Y, Trolet JL, Mary P, Vivier A, Gaquiere C, Boudart B
Solid-State Electronics, 127, 13, 2017
2 Characterization and analysis of electrical trap related effects on the reliability of AlGaN/GaN HEMTs
Berthet F, Guhel Y, Gualous H, Boudart B, Trolet JL, Piccione M, Sbrugnera V, Grimbert B, Gaquiere C
Solid-State Electronics, 72, 15, 2012