검색결과 : 2건
No. | Article |
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1 |
Analysis of degradation mechanisms in AlInN/GaN HEMTs by electroluminescence technique Berthet F, Petitdidier S, Guhel Y, Trolet JL, Mary P, Vivier A, Gaquiere C, Boudart B Solid-State Electronics, 127, 13, 2017 |
2 |
Characterization and analysis of electrical trap related effects on the reliability of AlGaN/GaN HEMTs Berthet F, Guhel Y, Gualous H, Boudart B, Trolet JL, Piccione M, Sbrugnera V, Grimbert B, Gaquiere C Solid-State Electronics, 72, 15, 2012 |