화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Threshold voltage and bulk inversion effects in nonclassical CMOS devices with undoped ultra-thin bodies
Trivedi VP, Fossum JG, Zhang WM
Solid-State Electronics, 51(1), 170, 2007
2 A process/physics-based compact model for nonclassical CMOS device and circuit design
Fossum JG, Ge L, Chiang MH, Trivedi VP, Chowdhury MM, Mathew L, Workman GO, Nguyen BY
Solid-State Electronics, 48(6), 919, 2004
3 The effect of N-2 plasma damage on AlGaAs/InGaAs/GaAs high electron mobility transistors. I. DC characteristics
Trivedi VP, Hsu CH, Luo B, Cao X, LoRache JR, Ren F, Pearton SJ, Abernathy CR, Lambers E, Hoppe M, Wu CS, Sasserath J, Lee JW, Mackenzie K
Solid-State Electronics, 44(12), 2101, 2000