검색결과 : 1건
| No. | Article |
|---|---|
| 1 |
Physics based modeling of gate leakage current due to traps in AlGaN/GaN HFETs Goswami A, Trew RJ, Bilbro GL Solid-State Electronics, 80, 23, 2013 |
| No. | Article |
|---|---|
| 1 |
Physics based modeling of gate leakage current due to traps in AlGaN/GaN HFETs Goswami A, Trew RJ, Bilbro GL Solid-State Electronics, 80, 23, 2013 |