검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
GaAs (111) epilayers grown by MBE on Ge (111): Twin reduction and polarity Pelati D, Patriarche G, Mauguin O, Largeau L, Travers L, Brisset F, Glas F, Oehler F Journal of Crystal Growth, 519, 84, 2019 |
| 2 |
GaAs nanowires formed by Au-assisted molecular beam epitaxy: Effect of growth temperature Harmand JC, Tchernycheva M, Patriarche G, Travers L, Glas F, Cirlin G Journal of Crystal Growth, 301, 853, 2007 |
| 3 |
Structural and photoluminescence studies of InAsN quantum dots grown on GaAs by MBE Sallet V, Patriarche G, Merat-Combes MN, Largeau L, Mauguin O, Travers L Journal of Crystal Growth, 290(1), 80, 2006 |
| 4 |
Effects of GaNAsSb intermediate barriers on GaInNAsSb quantum well grown by molecular beam epitaxy Li LH, Sallet V, Patriarche G, Largeau L, Travers L, Harmand JC Journal of Crystal Growth, 263(1-4), 58, 2004 |
| 5 |
Comparison of GaInNAs/GaAs and GaInNAs/GaNAs/GaAs quantum wells emitting over 1.3 mu m wavelength Li LH, Patriarche G, Lemaitre A, Largeau L, Travers L, Harmand JC Journal of Crystal Growth, 251(1-4), 403, 2003 |