검색결과 : 19건
| No. | Article |
|---|---|
| 1 |
Influence of quartz on silicon incorporation in HVPE grown AlN Fleischmann S, Richter E, Mogilatenko A, Weyers M, Trankle G Journal of Crystal Growth, 507, 295, 2019 |
| 2 |
MOVPE growth of violet GaN LEDs on beta-Ga2O3 substrates Li D, Hoffmann V, Richter E, Tessaro T, Galazka Z, Weyers M, Trankle G Journal of Crystal Growth, 478, 212, 2017 |
| 3 |
Fe-doping in hydride vapor-phase epitaxy for semi-insulating gallium nitride Richter E, Gridneva E, Weyers M, Trankle G Journal of Crystal Growth, 456, 97, 2016 |
| 4 |
Analysis of HVPE grown AlGaN layers on honeycomb patterned sapphire Fleischmann S, Mogilatenko A, Hagedorn S, Richter E, Goran D, Schafer P, Zeimer U, Weyers M, Trankle G Journal of Crystal Growth, 414, 32, 2015 |
| 5 |
Defect analysis in AlGaN layers on AIN templates obtained by epitaxial lateral overgrowth Mogilatenko A, Kuller V, Knauer A, Jeschke J, Zeimer U, Weyers M, Trankle G Journal of Crystal Growth, 402, 222, 2014 |
| 6 |
In-situ etching of patterned GaAs/InGaP surfaces for highly efficient 975 nm DFB-BA diode lasers Maassdorf A, Schultz CM, Brox O, Wenzel H, Crump P, Bugge F, Mogilatenko A, Erbert G, Weyers M, Trankle G Journal of Crystal Growth, 370, 226, 2013 |
| 7 |
Growth of GaN boules via vertical HVPE Richter E, Grunder M, Netzel C, Weyers M, Trankle G Journal of Crystal Growth, 350(1), 89, 2012 |
| 8 |
Uniformity of the wafer surface temperature during MOVPE growth of GaN-based laser diode structures on GaN and sapphire substrate Hoffmann V, Knauer A, Brunner C, Einfeldt S, Weyers M, Trankle G, Haberland K, Zettler JT, Kneissl M Journal of Crystal Growth, 315(1), 5, 2011 |
| 9 |
Hydride vapor phase epitaxy of GaN boules using high growth rates Richter E, Zeimer U, Hagedorn S, Wagner M, Brunner F, Weyers M, Trankle G Journal of Crystal Growth, 312(18), 2537, 2010 |
| 10 |
Well width study of InGaN multiple quantum wells for blue-green emitter Hoffmann V, Netzel C, Zeimer U, Knauer A, Einfeldt S, Bertram F, Christen J, Weyers M, Trankle G, Kneissl M Journal of Crystal Growth, 312(23), 3428, 2010 |