검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Impact of Ge-Sb-Te compound engineering on the set operation performance in phase-change memories Boniardi M, Ielmini D, Tortorelli I, Redaelli A, Pirovano A, Allegra M, Magistretti M, Bresolin C, Erbetta D, Modelli A, Varesi E, Pellizzer F, Lacaita AL, Bez R Solid-State Electronics, 58(1), 11, 2011 |
| 2 |
Resistive switching characteristics of NiO films deposited on top of W or Cu pillar bottom electrodes Dumas C, Deleruyelle D, Demolliens A, Muller C, Spiga S, Cianci E, Fanciulli M, Tortorelli I, Bez R Thin Solid Films, 519(11), 3798, 2011 |
| 3 |
Phase-change memory technology with self-aligned mu Trench cell architecture for 90 nm node and beyond Pirovano A, Pellizzer F, Tortorelli I, Rigano A, Harrigan R, Magistretti M, Petruzza P, Varesi E, Redaelli A, Erbetta D, Marangon T, Bedeschi F, Fackenthal R, Atwood G, Bez R Solid-State Electronics, 52(9), 1467, 2008 |