| 1 |
High detectivity AlGaAsSb/InGaAsSb photodetectors grown by molecular beam epitaxy with cutoff wavelength up to 2.6 mu m
Shao H, Torfi A, Li W, Moscicka D, Wang WI
Journal of Crystal Growth, 311(7), 1893, 2009 |
| 2 |
Midinfrared InGaAsSb quantum well lasers with digitally grown tensile-strained AlGaAsSb barriers
Li W, Shao H, Moscicka D, Torfi A, Wang WI
Journal of Vacuum Science & Technology B, 25(3), 1083, 2007 |
| 3 |
Molecular-beam epitaxy of phosphor-free 1.3 mu m InAlGaAs multiple-quantum-well lasers on InP (100)
Li W, Moscicka D, Torfi A, Wang WI
Journal of Vacuum Science & Technology B, 25(3), 1090, 2007 |
| 4 |
Interface and optical properties of InGaAsNSb/GaAs quantum wells on GaAs (411) substrates by molecular beam epitaxy
Li W, Pei C, Torfi A, Moscicka D, Wang WI
Journal of Vacuum Science & Technology B, 25(4), 1533, 2007 |
| 5 |
Type-II InAs/GaSb superlattices grown on GaSb (311)B by molecular beam epitaxy for long-wavelength infrared applications
Shao H, Li W, Torfi A, Moscicka D, Wang WI
Journal of Vacuum Science & Technology B, 24(4), 2144, 2006 |
